Hynix Semiconductor and Toshiba said on July 13 that they will develop spin-transfer torque magnetoresistance random access memory (STT-MRAM) technology -- for use in devices such as smartphones -- would help them minimize risk.
Toshiba recognizes MRAM as an important next-generation memory technology that could sustain future growth in its semiconductor business, the statement said.
The two companies intend to set up a joint production venture once the technology has been successfully developed.
Hynix CEO Kwon Oh-Chul described MRAM as "a perfect fit" for growing consumer demand for more sophisticated smartphones.
"MRAM is a rare gem full of exciting properties, like ultra high-speed, low-power consumption, and high capacity, and it will play the role of key factor in driving advances in memories," he said.
The two companies said they have also extended a patent cross-licensing and product supply agreements reached in 2007.
Copyright Agence France-Presse, 2011